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february 2007 rev 7 1/17 17 stb120nh03l - STI120NH03L stp120nh03l n-channel 30v - 0.005 ? - 60a - to-220 / d 2 pak / i 2 pa k stripfet? power mosfet for dc-dc conversion general features r ds(on) *qg industry?s benchmark low conduction losses reduced switching losses reduced low threshold device description these devices utilizes the latest advanced design rules of st?s proprietary stripfet? technology. it is ideal in high performance dc-dc converter applications where efficiency is to be achieved at very high output currents. applications switching application internal schematic diagram type v dss r ds(on) i d stb120nh03l 30v <0.0055 ? 60 (1) 1. value limited by wire bonding stp120nh03l 30v <0.0055 ? 60 (1) STI120NH03L 30v <0.0055 ? 60 (1) to-220 d 2 pak 1 2 3 1 3 1 2 3 i 2 pak www.st.com order codes part number marking package packaging stb120nh03l b120nh03l d 2 pak tape & reel STI120NH03L 120nh03l i2pak tube stp120nh03l p120nh03l to-220 tube
contents stb120nh03l - STI120NH03L - stp120nh03l 2/17 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
stb120nh03l - STI120NH03L - stp120nh03l electrical ratings 3/17 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0v) 30 v v gs gate-source voltage 20 v i d (1) 1. value limited by wire bonding drain current (continuous) at t c = 25c 60 a i d (1) drain current (continuous) at t c = 100c 60 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 240 a p tot total dissipation at t c = 25c 110 w derating factor 0.73 w/c eas (3) 3. starting t j = 25c, i d = 30a, v dd < 30v single pulse avalanche energy 700 mj t j t stg operating junction temperature storage temperature -55 to 175 c table 2. thermal data r thjc thermal resistance junc tion-case max 1.30 c/w r thja thermal resistance junc tion-amb max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics stb120nh03l - STI120NH03L - stp120nh03l 4/17 2 electrical characteristics (t case =25c unless otherwise specified) table 3. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating, t c =125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20v 100 a v gs(th) gate threshold voltage v ds = v gs , i d = 250a 11.83v r ds(on) static drain-source on resistance v gs = 10v, i d = 30a v gs = 5v, i d = 30a 0.005 0.006 0.0055 0.0105 ? ? table 4. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1mhz, v gs = 0 4100 680 70 pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time off voltage rise time fall time v dd = 15v, i d = 30a, r g = 4.7 ?, v gs = 10v (see figure 12 ) 16 95 48 23 ns ns ns ns rg gate input resistance f = 1mhz gate dc bias=0 test signal level=20mv open drain 1.3 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15v, i d = 60a v gs =10v (see figure 13 ) 57 12 7 77 nc nc nc q oss (1) 1. qoss = coss* ? v in , coss = cgd + cds. see power losses calculation output charge v ds = 24v, v gs = 0 27 ns q gls (2) 2. gate charge for synchronous operation. third-quadrant gate charge v ds < 0, v gs = 0v 55 ns
stb120nh03l - STI120NH03L - stp120nh03l electrical characteristics 5/17 table 5. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) 60 240 a a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 30a, v gs = 0 1.4 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 60a, di/dt = 100a/s, v dd = 30v, t j =150c 46 64 2.8 ns nc a
electrical characteristics stb120nh03l - STI120NH03L - stp120nh03l 6/17 2.1 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. normalized b vdss vs temperature figure 6. static drain-source on resistance
stb120nh03l - STI120NH03L - stp120nh03l electrical characteristics 7/17 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics
test circuit stb120nh03l - STI120NH03L - stp120nh03l 8/17 3 test circuit figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform
stb120nh03l - STI120NH03L - stp120nh03l package mechanical data 9/17 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data stb120nh03l - STI120NH03L - stp120nh03l 10/17 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stb120nh03l - STI120NH03L - stp120nh03l package mechanical data 11/17 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
package mechanical data stb120nh03l - STI120NH03L - stp120nh03l 12/17 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
stb120nh03l - STI120NH03L - stp120nh03l packing mechanical data 13/17 5 packing mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
appendix a stb120nh03l - STI120NH03L - stp120nh03l 14/17 6 appendix a the power losses associated with the fets in a synchronous buck converter can be estimated using the equations shown in the table below. the formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. however a very important parameter, the working temperature, is not considered. the real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. the low side (sw2) device requires: ? very low r ds(on) to reduce conduction losses ? small qgls to reduce the gate charge losses ? small coss to reduce losses due to output capacitance ? small qrr to reduce losses on sw1 during its turn-on ? the cgd/cgs ratio lower than vth/vgg ra tio especially with low drain to source ? voltage to avoid the cross conduction phenomenon; the high side (sw1) device requires: ? small rg and ls to allow higher gate current peak and to limit the voltage feedback on the gate ? small qg to have a faster commutation and to reduce gate charge losses ?low r ds(on) to reduce the conduction losses. figure 18. buck converter: power losses estimation
stb120nh03l - STI120NH03L - stp120nh03l appendix a 15/17 table 6. power losses calculation high side switching (sw1) low side switch (sw2) pconduction pswitching zero voltage switching pdiode recovery (1) 1. dissipated by sw1 during turn-on not applicable conduction not applicable pgate(q g ) p qoss table 7. parameters meaning parameter meaning d duty-cycle q gsth post threshold gate charge q gls third quadrant gate charge pconduction on state losses pswitching on-off transition losses pdiode conduction and reverse recovery diode losses pgate gate drive losses p qoss output capacitance losses * i * r 2 l ds(on)sw1 ) 1 ( * i * r 2 l ds(on)sw2 ? g l i i * f * ) q (q * v gd(sw1) gsth(sw1) in + f * q * v rr(sw2) in f * t * i * v deadtime l f(sw2) f * v * q gg g(sw1) f * v * q gg gls(sw2) 2 f * q * v oss(sw1) in 2 f * q * v oss(sw2) in
revision history stb120nh03l - STI120NH03L - stp120nh03l 16/17 7 revision history table 8. revision history date revision changes 20-dec-2004 4 first release 20-dec-2005 5 new device inserted 19-jun-2006 6 the document has been reformatted 16-feb-2007 7 added i2pak package
stb120nh03l - sti120 nh03l - stp120nh03l 17/17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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